| PART |
Description |
Maker |
| C122N |
Silicon controlled rectifier. Reverse blocking triode thyristor. 8 A RMS. Repetitive peak off-state voltage and repetitive peak reverse voltage 800 V.
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Motorola
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| IDT74FCT825BTSOB IDT74FCT825BTSO IDT74FCT825BTQB I |
Tantalum Electrolytic Capacitor; Capacitance:0.33uF; Capacitance Tolerance: /- 20 %; Working Voltage, DC:60V; Package/Case:A; Terminal Type:Axial Leaded; ESR:15ohm; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes
Tantalum Electrolytic Capacitor; Capacitance:0.33uF; Capacitance Tolerance: /- 20 %; Working Voltage, DC:125V; Package/Case:A; Terminal Type:Axial Leaded; ESR:14ohm; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes
Tantalum Electrolytic Capacitor; Capacitance:0.33uF; Capacitance Tolerance: /- 10 %; Working Voltage, DC:125V; Package/Case:A; Terminal Type:Axial Leaded; ESR:14ohm; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes
Tantalum Electrolytic Capacitor; Capacitance:0.33uF; Capacitance Tolerance: /- 20 %; Working Voltage, DC:50V; Package/Case:A; Terminal Type:Axial Leaded; ESR:15ohm; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes
CAP 0.82UF 50V 10% X7R SMD-1210 TR-7-PL SN-NIBAR
CAP 0.1UF 50V 10% X7R SMD-1805 TR-7-PL SN-NIBAR
HIGH-PERFORMANCE CMOS BUS INTERFACE REGISTERS FCT SERIES, 9-BIT DRIVER, TRUE OUTPUT, CDFP24
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IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
INTEGRATED DEVICE TECHNOLOGY INC
Integrated Device Techn...
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| NTE5705 NTE5700 NTE5702 NTE5701 NTE5703 NTE5704 |
Industrial power module. Hybrid doubler. Max repetitive peak reverse voltage Vrrm = 1200V.
Industrial power module. SCR AC switch. Max repetitive peak reverse voltage Vrrm = 1200V.
Industrial power module. Single phase, all SCR bridge. Max repetitive peak reverse voltage Vrrm = 1200V.
Industrial power module. Single phase, hybrid bridge, common anode, freewheeling diode. Max repetitive peak reverse voltage Vrrm = 1200V.
|
NTE[NTE Electronics]
|
| GBL400 GBL404 GBL402 GBL401 GBL406 GBL408 |
Miniature single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 800V. Max average forward rectified output current 4.0A(Tc=50degC), 3.0A(Tj=40degC).
Miniature single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 600V. Max average forward rectified output current 4.0A(Tc=50degC), 3.0A(Tj=40degC).
Miniature single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 100V. Max average forward rectified output current 4.0A(Tc=50degC), 3.0A(Tj=40degC).
Miniature single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 200V. Max average forward rectified output current 4.0A(Tc=50degC), 3.0A(Tj=40degC).
Miniature single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 400V. Max average forward rectified output current 4.0A(Tc=50degC), 3.0A(Tj=40degC).
IN-LINE MINIATURE SINGLE PHASE SILICON BRIDGE RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 4.0 Amperes)
Aluminum Polymer SMT Capacitor; Capacitance: 1000uF; Voltage: 4V; Case Size: 10x8 mm; Packaging: Tape & Reel
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PANJIT[Pan Jit International Inc.]
PanJit International Inc.
|
| NTE5825 NTE5818 NTE5819 NTE5823 |
Silicon power rectifier. Stud mount, fast recovery, 12 Amp. Peak repetitive reverse voltage 600V. Non-repetitive peak reverse voltage 660V.
Silicon Power Rectifier Stud Mount, Fast Recovery, 12 Amp
Silicon Power Rectifier Stud Mount Fast Recovery 12 Amp
Silicon power rectifier. Stud mount, fast recovery, 12 Amp. Peak repetitive reverse voltage 200V. Non-repetitive peak reverse voltage 250V.
|
NTE[NTE Electronics]
|
| NTE5906 NTE6005 NTE5980 NTE5907 NTE5995 NTE5986 NT |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 40A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
Receptacle With A Wire Wrap Tail
Silicon Power Rectifier Diode / 40 Amp
Silicon Power Rectifier Diode 40 Amp
NTE5906, NTE5907, NTE5980 thru NTE6005 Silicon Power Rectifier Diode, 40 Amp
40 A, 300 V, SILICON, RECTIFIER DIODE
40 A, 200 V, SILICON, RECTIFIER DIODE
|
NTE Electronics, Inc.
NTE[NTE Electronics]
|
| 1N250B 1N250C 1N1191 1N1192 1N248B 1N248C 1N1198 1 |
PEAK REPETITIVE REVERSE VOLTAGE DC BLOCKING VOLTAGE
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New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conductor P...
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| 1SMB30 1SMB30A 1SMB36 1SMB36A 1SMB15 1SMB5.0 1SMB5 |
Plastic surfase mount zener overvoltage transient suppressor. Reverse stand-off voltage 160V. 600W peak power, 3.0W steady state.
ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS
Plastic surfase mount zener overvoltage transient suppressor. Reverse stand-off voltage 120V. 600W peak power, 3.0W steady state.
Plastic surfase mount zener overvoltage transient suppressor. Reverse stand-off voltage 110V. 600W peak power, 3.0W steady state.
Plastic surfase mount zener overvoltage transient suppressor. Reverse stand-off voltage 100V. 600W peak power, 3.0W steady state.
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http://
MOTOROLA[Motorola, Inc]
|
| SMAJ530AMP550 SMAJ530550 |
Surface Mount TRANSZORB Transient Voltage Suppressors Peak Pulse Power 300W Reverse Voltage 530,550V
Diodes
|
Vishay
|
| U1GC44 |
Average Forward Current Repetitive Peak Reverse Voltage Mini Plastic Mold Package
|
Toshiba Semiconductor
|
| C230 C233 C231 C232 C231B3 |
Silicon controlled rectifier. Reverse blocking triode thyristor. 25 A RMS. Repetitive peak off-state voltage 200 V.
|
MOTOROLA[Motorola, Inc]
|
| FTD182 |
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
DIODE TRIO DELCO TYPE Repetitive Peak Reverse Voltage VRRM 200
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FCI connector
First Components International
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